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| C122F1, C122B1 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. * Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 200 Volts * Device Marking: Logo, Device Type, e.g., C122F1, Date Code MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = 25 to 100C, Sine Wave, 50 to 60 Hz; Gate Open) C122F1 C122B1 On-State RMS Current (180 Conduction Angles; TC = 75C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width = 10 s, TC = 70C) Forward Average Gate Power (t = 8.3 ms, TC = 70C) Forward Peak Gate Current (Pulse Width = 10 s, TC = 70C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 200 IT(RMS) ITSM 8.0 90 Amps Amps 1 A2s Watts Watt 1 2.0 - 40 to +125 - 40 to +150 Amps C C 2 3 TJ Tstg 4 2 3 Value Unit Volts 4 http://onsemi.com SCRs 8 AMPERES RMS 50 thru 200 VOLTS G A K I2t PGM PG(AV) IGM 34 5.0 0.5 TO-220AB CASE 221A STYLE 3 PIN ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION Device C122F1 C122B1 Package TO220AB TO220AB Shipping 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (c) Semiconductor Components Industries, LLC, 1999 1 February, 2000 - Rev. 2 Publication Order Number: C122F1/D C122F1, C122B1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Max 1.8 62.5 260 Unit C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TC = 25C TC = 125C -- -- -- -- 10 0.5 A mA ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = 16 A Peak, TC = 25C) Gate Trigger Current (Continuous dc) (VAK = 12 V, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 Ohms) Gate Non-Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 Ohms, TC = 125C) Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25C TC = -40C Turn-Off Time (VD = Rated VDRM) (ITM = 8 A, IR = 8 A) TC = 25C TC = -40C VGT TC = 25C TC = -40C VGD IH -- -- tq -- -- -- 50 30 60 -- s -- -- 0.2 -- -- -- 1.5 2.0 -- Volts mA VTM IGT -- -- -- -- 25 40 Volts -- -- 1.83 Volts mA DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100C) (1) Pulse Test: Pulse Width 1 ms, Duty Cycle 2%. dv/dt -- 50 -- V/s http://onsemi.com 2 C122F1, C122B1 Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 100 TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 100 95 90 85 80 75 70 65 60 0 1 2 3 4 5 CONDUCTION ANGLE = 60 RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hz 120 180 0 CONDUCTION CONDUCTION ANGLE ANGLE 90 360 ONE CYCLE OF SUPPLY FREQUENCY 80 DC CONDUCTION ANGLE = 30 60 90 120 180 0 CONDUCTION ANGLE 360 240 360 70 60 0 1 2 3 4 5 6 7 8 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPERES) 6 7 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPERES) Figure 1. Current Derating (Half-Wave) P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS) TC , AVERAGE ON-STATE POWER DISSIPATION (WATTS) Figure 2. Current Derating (Full-Wave) 14 RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPERES) CONDUCTION ANGLE 30 60 90 180 120 DC 10 240 8 120 6 CONDUCTION ANGLE = 60 180 360 4 0 CONDUCTION CONDUCTION ANGLE ANGLE 360 ONE CYCLE OF SUPPLY FREQUENCY 2 0 0 1 RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz 2 3 4 5 6 7 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPERES) Figure 3. Maximum Power Dissipation (Half-Wave) Figure 4. Maximum Power Dissipation (Full-Wave) http://onsemi.com 3 C122F1, C122B1 PACKAGE DIMENSIONS TO-220AB CASE 221A-07 ISSUE Z -T- B F C SEATING PLANE T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 4 Q 123 A U K H Z L V G D N J R STYLE 3: PIN 1. 2. 3. 4. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 C122F1/D |
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